n-channel super trench ii power mosfet.
* VDS =85V,ID =320A
RDS(ON)=1.3mΩ , typical @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating t.
that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(O.
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